20N60 mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 150 mW
* Ultra Low Gate Charge (Typ. Qg = 75 nC )
* Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
* 650 V @ TJ .
SuperFET MOSFET is onsemi’s first generation of high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize con.
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